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| PHP78NQ03LT N-channel TrenchMOS logic level FET Rev. 05 -- 9 June 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features s Logic level threshold s Fast switching 1.3 Applications s Computer motherboards s DC-to-DC converters 1.4 Quick reference data s VDS 25 V s RDSon 9 m s ID 75 A s QGD = 4.2 nC (typ) 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description gate (G) drain (D) source (S) mounting base; connected to drain mbb076 Simplified outline mb Symbol D G S 123 SOT78 (TO-220AB) Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 3. Ordering information Table 2: Ordering information Package Name PHP78NQ03LT SC-46 Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage drain-gate voltage gate-source voltage drain current Tmb = 25 C; VGS = 5 V; Figure 2 and 3 Tmb = 100 C; VGS = 5 V; Figure 2 Tmb = 25 C; VGS = 10 V Tmb = 100 C; VGS = 10 V IDM Ptot Tstg Tj IS ISM peak drain current total power dissipation storage temperature junction temperature source (diode forward) current Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions 25 C Tj 175 C 25 C Tj 175 C; RGS = 20 k Min -55 -55 Max 25 25 20 61 43 75 53 228 93 +175 +175 75 228 185 Unit V V V A A A A A W C C A A mJ Source-drain diode peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 43 A; tp = 0.25 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 C Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 2 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 120 Pder (%) 80 03aa16 120 Ider (%) 80 03aa24 40 40 0 0 50 100 150 Tmb (C) 200 0 0 50 100 150 200 Tmb (C) P tot P der = ---------------------- x 100% P tot ( 25 C ) ID I der = ------------------- x 100% I D ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature 103 ID (A) 102 Fig 2. Normalized continuous drain current as a function of mounting base temperature 003aaa175 Limit RDSon = VDS / ID tp = 10 s 100 s 10 DC 1 ms 10 ms 100 ms 1 1 10 VDS (V) 102 Tmb = 25 C; IDM is single pulse; VGS = 5 V Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 3 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 5. Thermal characteristics Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions vertical in still air Min Typ 60 Max 1.6 Unit K/W K/W thermal resistance from junction to mounting base Figure 4 thermal resistance from junction to ambient Symbol Parameter 10 Zth(j-mb) (K/W) 1 003aaa233 = 0.5 0.2 0.1 tp T 10-1 0.05 0.02 single pulse P = tp t T 10 -2 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 4 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 250 A; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 and 10 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 25 V; VGS = 0 V Tj = 25 C Tj = 150 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 15 V; VDS = 0 V VGS = 5 V; ID = 25 A; Figure 6 and 8 Tj = 25 C Tj = 175 C VGS = 10 V; ID = 25 A; Figure 6 and 8 Dynamic characteristics QG(tot) QGS QGD Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 reverse recovery time recovered charge IS = 20 A; dIS/dt = -100 A/s; VGS = 0 V; VR = 25 V VDS = 15 V; RL = 0.6 ; VGS = 10 V; RG = 5.6 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 13 ID = 50 A; VDS = 15 V; VGS = 5 V; Figure 11 13 4.8 4.2 389 156 20 92 30 40 0.95 40 32 5.6 33 130 48 60 1.2 nC nC nC pF pF pF ns ns ns ns V ns nC 11.5 20.7 7.65 13.5 24.3 9 m m m 10 10 500 100 A A nA 1 0.5 1.5 2 2.2 V V V 25 22 V V Min Typ Max Unit Static characteristics 1074 - Source-drain diode 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 5 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 60 10 V ID (A) 40 6V 5V 4.5 V 4V 003aaa169 0.06 VGS = 3 V RDSon () 0.04 3.5 V 003aaa171 3.5 V 20 VGS = 3 V 0.02 4V 5V 10 V 6V 0 0 0.5 1 1.5 VDS (V) 2 0 0 20 40 ID (A) 60 Tj = 25 C Tj = 25 C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 40 ID (A) 30 VDS > ID x RDSon 003aaa170 Fig 6. Drain-source on-state resistance as a function of drain current; typical values 2 a 1.5 03af18 20 1 10 175 C Tj = 25 C 0.5 0 1 2 3 VGS (V) 4 0 -60 0 60 120 Tj (C) 180 Tj = 25 C and 175 C; VDS > ID x RDSon R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 6 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 2.5 VGS(th) (V) 2 max 03aa33 10-1 ID (A) 10-2 03aa36 1.5 typ 10-3 min typ max 1 min 10-4 0.5 10-5 0 -60 10-6 0 60 120 Tj (C) 180 0 1 2 VGS (V) 3 ID = 1 mA; VDS = VGS Tj = 25 C; VDS = 5 V Fig 9. Gate-source threshold voltage as a function of junction temperature 10 VGS (V) 8 Fig 10. Sub-threshold drain current as a function of gate-source voltage 003aaa174 6 4 2 0 0 10 20 30 QG (nC) 40 ID = 50 A; VDS = 15 V Fig 11. Gate-source voltage as a function of gate charge; typical values 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 7 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 40 IS (A) 30 003aaa173 104 003aaa172 C (pF) Ciss 20 103 175 C 10 Tj = 25 C Coss Crss 0 0 0.4 0.8 1.2 VSD (V) 1.6 102 10-1 1 10 VDS (V) 102 Tj = 25 C and 175 C; VGS = 0 V VGS = 0 V; f = 1 MHz Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values Fig 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 8 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1 1.45 1.00 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7 e 2.54 L 15.0 12.8 L1 3.30 2.79 L2 max. 3.0 p 3.8 3.5 q 3.0 2.7 Q 2.6 2.2 OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 05-01-31 05-03-22 Fig 14. Package outline SOT78 (TO-220AB) 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 9 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 8. Revision history Table 6: Revision history Release date Data sheet Change status notice Document number 9397 750 15086 Supersedes PHP_PHU78NQ03LT_4 Document ID PHP78NQ03LT_5 Modifications: 20050609 Product data sheet * * The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. Removal of PHU78NQ03LT (now in separate data sheet). 9397 750 13431 9397 750 09667 9397 750 09418 9397 750 08916 PHP_PHB_PHD78NQ03LT_3 PHP_PHB_PHD78NQ03LT_2 PHP_PHB_PHD78NQ03LT_1 - PHP_PHU78NQ03LT_4 PHP_PHB_PHD78NQ03LT_3 PHP_PHB_PHD78NQ03LT_2 PHP_PHB_PHD78NQ03LT_1 20040726 Product data sheet 20020626 Product data sheet 20020322 Product data sheet 20011114 Product data sheet 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 10 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 9. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 12. Trademarks Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 15086 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 05 -- 9 June 2005 11 of 12 Philips Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 9 June 2005 Document number: 9397 750 15086 Published in The Netherlands |
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